Photonics equipment to lift barriers
2006 9 18, Intel Corporation and the University of California, Santa Barbara (UCSB) researchers announced Cloth They successfully developed the world’s first manufactured using standard silicon process Electricity Hybrid Silicon Laser (Hybrid SiliconLaser). This breakthrough for the future low-cost computers and data centers, high-bandwidth silicon photonics devices of one of the last obstacles have been resolved.
Researchers have been able to indium phosphide (IndiumPhosphide) light-emitting properties of light-routing capabilities of silicon into a single hybrid chip. When voltage is applied to InP when the light enters the silicon Waveguide (W av eguide), to create a continuous laser beam, which laser beams can be used to drive other silicon photonic devices. This laser technology based on silicon could drive wider use of photonics in computers because the use of large-scale silicon manufacturing technology to significantly reduce costs.
Intel Hybrid Silicon Laser Chip
“This technology can be used inside the computer to the next low-cost, terabit (TB) magnitude of the optical ‘data path’ (datapipes), and to usher in new era of high-performance computing applications,” Intel’s Photonics Technology Lab director Mario Pannixiya (MarioPaniccia) said. “While there is still a long distance away from commercialization, but we believe dozens, even hundreds of hybrid silicon lasers and other silicon photonic components, has been integrated into a single silicon chip.”
“We and the Intel research project fully reflects the industry and academia can work together to promote scientific and technological development,” University of California, Santa Barbara Electric And computer engineering professor John Bowers (JohnBowers) pointed out, “By combining UCSB’s expertise with Indium Phosphide and Intel’s silicon photonics expertise, we have developed a method based on bonding structure of a new laser, it can be used for wafer-level, semi-wafer level and chip-level applications, while this is the large-scale optical integration onto a silicon platform for a possible solution. This is the start low-cost mass production of highly integrated silicon photonic chips. “
Silicon is widely used in digital Electronic Products, mass production, but also used to route, detect, modulate and even amplify, but it can not effectively generate light. On the other hand, InP-based lasers are commonly used Telecommunications Equipment, but need to be combined and calibrated one by one. This is compared to the computer industry, high-volume, low-cost manufacturing needs, still seems too expensive and time-consuming.
Hybrid silicon laser involves a unique design, when the silicon waveguide to contain and control the laser, its use of InP material for light generation and amplification. The key to manufacturing the device is a low- Plasma Body (with a charge of oxygen) in these two materials Table Sides form a thin oxide layer (about 25 atoms thick).
Material when heated and pressurized on both sides of the two materials as the oxide film Glass Adhesives Like fusion, thereby fusing the two materials into a single chip. Voltage is applied to InP, its light will be generated through this layer of glass-glue into the silicon oxide layer in the waveguide. Waveguide is contained and controlled, creating a hybrid silicon laser. The design of the hybrid silicon waveguide laser performance and laser wavelength is essential.
Today’s announcement builds on Intel’s other accomplishments on long-term research project that uses standard silicon manufacturing processes to “silicide (siliconize)” photonics devices. In 2004, Intel researchers demonstrated the first silicon laser bandwidth of more than 1GHz Modulator Than the previous record of silicon-based modulator nearly 50 times faster. In 2005, Intel researchers were the first to demonstrate that silicon could be used to enlarge the external light source, using the Raman effect (Ramaneffect) chip to produce a continuous laser (laser-on-a-chip) light. Professor Bowers
silicon photonics materials and lasers for more than 25 years. He is currently focused on R & D data transfer rate of up to 160Gb / s of the new light Electronic Equipment And the bonding of different materials to create higher performance of new equipment technology. [Key words]: Intel Hybrid Silicon Laser Chip Comment Large In Small
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